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Galaxy Microelectronics Plans to Invest 1.078 Billion Yuan in High-End Core Device Industrialization Project
Galaxy Microelectronics announced on September 21 that the company plans to invest 1.078 billion yuan of its own or self-raised funds in the High-End Core Device Industrialization and Innovation Capability Construction Project. The project is a continuation of the previously disclosed Phase One Plant Construction Project for the High-End Integrated Circuit Discrete Device Industrialization Base, mainly involving renovation, equipment purchase and installation, production line commissioning, and customer verification on the basis of the Phase One plant. The project is expected to start on January 1, 2027, with a construction period of three years. In the first half of 2026, Galaxy Microelectronics achieved revenue of 611 million yuan and net profit attributable to the parent company of 48.26 million yuan.
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688689.CG · Capital · Positive Galaxy Microelectronics plans to invest 1.078 billion yuan in a high-end core device industrialization project, a major capex commitment.